Resulting cell efficiencies are in the 10–14% range. Most manufacturers, in an attempt to reduce manufacturingĬost, use a minimal number of low-cost processing steps. Materials and processing without sacrificing cell efficiency. This can be accomplished by lowering the cost of solar cell The module cost must be reduced by about a factor of four. OR widespread implementation of Si photovoltaics (PV), Index Terms-Rapid thermal processing, screen printing, silicon, solar cells. Zone (FZ) monocrystalline Si to demonstrate the throughputĪnd efficiency potential of these processes.
Gridded-back contact (bifacial) devices are fabricated on float
Solarcell blp full#
Solar cells with full Al-BSF and metal coverage as well as This paper presents rapid and improved formation ofĥ) integration of these technologies to achieve higher efficiency cells in shorter processing times. Processes that are not only fast but also capable of yielding Therefore, the objective of this study is to develop Must be developed that can handle more wafers per unit Without sacrificing efficiency, and corresponding equipment Processes mustīe invented that can significantly reduce the processing time Throughput of roughly one cell per second. Production capacity, a PV manufacturing plant must have a Not efficient enough to meet the cost and efficiency targets simultaneously. Laboratory cells are too expensive and industrial cells are
Gridded-back contact (bifacial) cells with surface passivationĪccomplished by the stack and gri dded front and back contactsĪnd high-quality contacts formed by vacuum evaporation and The above individual processes are integrated to achieve 1) >19%Įfficient solar cells with emitter and Al-BSF formed by RTPĪnd contacts formed by vacuum evaporation and lift-off, 2) 17%Įfficient manufacturable cells with emitter and Al-BSF formed inĪ beltline furnace and contacts formed by SP, and 3) 17% efficient Three and ten, respectively, compared to no passivation. The stack also lowers the emitter saturationĬurrent density (J ooee ) of 40 and 90 /sq emitters by a factor of Passivation scheme is its ability to withstand short 700–850 CĪnneal treatments (like the ones used to fire SP contacts) withoutĭegradation in S. Surface recombination velocity (S) to approximately 10 cm/s on Of a rapid thermal oxide layer) is developed that reduces the Scheme (formed by stacking a plasma silicon nitride film on top Is used to form an excellent back surface field (BSF) in 2 min toĪchieve an effective back surface recombination velocity (Se ) Third, a combination of SP aluminum and RTP Thermal processing (RTP) systems (instead of in a conventional Second, rapid emitter formation is accomplished byĭiffusion under tungsten halogen lamps in both beltline and rapid First, a methodologyįor achieving high-quality screen-printed (SP) contacts is developed to achieve fill factors (FF’s) of 0.785–0.795 on monocrystalline Si. High-efficiency monocrystalline Si solar cells.
Ebong, Member, IEEE, and Parag DoshiĪbstract- Rapid and potentially low-cost process techniquesĪre analyzed and successfully applied toward the fabrication of Technologies for High-Efficiency Silicon Solar CellsĪjeet Rohatgi, Fellow, IEEE, Shreesh Narasimha, Abasifreke U. Understanding and Implementation of Rapid Thermal IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.
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